The Plasma-Therm SLR RIE/ICP Plasma Etch System is a load-locked deep silicon etcher with wafer transfer. 150 mm diameter wafers can be loaded directly, 100 mm wafer or small pieces can be loaded using a 150 mm carrier wafer. The system lower electrode is temperature controllable in the range of 5-90C. Helium back-side cooling is used to cool the sample during etch. The system has an ICP high-density plasma source with a 1000W RF generator at 2 Mhz and automatic matching unit. Substrate bias is provided by an independent 500W RF generator at 13.56 MHz, close-coupled to the lower electrode. The system is set up for fluorine chemistry. Ar, O2, CHF3, CF4, C4F8, and SF6 are the available gases. Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as baked photoresist, PMMA, and polyimide. Etch rates on the order of 2 um/min can be achieved on a 150mm wafers with uniformity of 5% (etch rate is dependent specific process and sample conditions).