The Plasma-Therm SLR PECVD system at Nano3 is a load-locked system with platen transfer. 150 mm diameter wafers can be loaded directly, 100 mm wafer or small pieces can be loaded using a provided aluminum platen. The top electrode of the system is RF powered (maximum 500W). The system is operated at 350C. Gases supplied are 5%SiH4 diluted in helium (max flow 2000sccm), NH3 (max flow 50sccm), N2O (max flow 2000sccm), N2 (max flow 2000sccm), He (max flow 1000sccm), CH4 (max flow 2000sccm) and 80%CF4/20%O2(for chamber cleaning). Current well characterized processes include SiO2, SiNx (high deposition rate 30nm/min) and SiNx (low deposition rate 5.4nm/min). For additional potential processes, please contact Nano3 staff.