Plasma-Therm SLR PECVD
The Plasma-Therm SLR PECVD system at Nano3 is a load-locked system
with platen transfer. 150 mm diameter wafers can be loaded directly,
100 mm wafer or small pieces can be loaded using a provided
aluminum platen. The top electrode of the system is RF powered
(maximum 500W). The system is operated at 350C. Gasses supplied
are 5%SiH4 diluted in helium (maximum flow 2000sccm), NH3 (maximum flow 50sccm), N2O (maximum flow
2000sccm), N2 (maximum flow 2000sccm), He (maximum flow 1000sccm), CH4
(maximum flow 2000sccm) and 80%CF4/20%O2(for chamber cleaning).
Current well characterized processes include SiO2, SiNx (high
deposition rate 30nm/min) and SiNx (low deposition rate 5.4nm/min).
For additional potential processes, please contact Nano3 staff.
PLEASE USE FOM FOR EQUIPMENT RESERVATIONS