Oxford Plasmalab 80+ PECVD
The Oxford Plasmalab 80+ PECVD system can be used for plasma-enhanced chemical vapor deposition of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide and amorphous silicon, using 5% Silane/bal He as the silicon source material. Film stress can be controlled by alternating between RF and low frequency plasma during deposition. Predetermined recipes allow the user to generate high quality films with very high uniformity on samples up to 4" in diameter.
PLEASE USE FOM FOR EQUIPMENT RESERVATIONS