Manually loaded, single wafer rapid thermal annealing system, capable of processing silicon only (NO III-V, II/VI materials) up to 100mm in diameter.

Available process gases: N2, O2, 5%H2/N2 (at atmospheric pressure)

Max. temperature: 1100C

Max. heating rate: 50C/s

Max. anneal duration is temperature dependent (ranging from 60s at 1100C to 3600s at 450C)