Manually loaded, single wafer rapid thermal annealing system, capable of processing silicon and III-V substrates up to 100mm in diameter.
Available process gases: N2, O2, 5%H2/N2 (at atmospheric pressure)
Max. temperature: 1100C
Max. heating rate: 50C/s
Max. anneal duration is temperature dependent (ranging from 60s at 1100C to 3600s at 450C)