Load locked deep silicon etcher, capable of Oxford cryo and BOSCH etching. 205mm Cryo RIE electrode (-150 - 400°C), with backside helium cooling. ICP 180mm high-density plasma source with 3kW RF generator and automatic matching unit. Substrate bias provided by independent 300W RF generator close-coupled to the lower electrode. Lower electrode can be pulsed at low frequency (350-460kHz, up to 300W power) for optimized etching of buried insulating layers. Fluorinated chemistry: Ar, O2, CHF3, CF4,C4F8, SF6
Cryo mode operation is available on request, please contact email@example.com.